JPS639384B2 - - Google Patents
Info
- Publication number
- JPS639384B2 JPS639384B2 JP58152829A JP15282983A JPS639384B2 JP S639384 B2 JPS639384 B2 JP S639384B2 JP 58152829 A JP58152829 A JP 58152829A JP 15282983 A JP15282983 A JP 15282983A JP S639384 B2 JPS639384 B2 JP S639384B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- transistors
- polycrystalline silicon
- memory cell
- bit lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 210000000352 storage cell Anatomy 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
Landscapes
- Static Random-Access Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58152829A JPS5951563A (ja) | 1983-08-22 | 1983-08-22 | 集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58152829A JPS5951563A (ja) | 1983-08-22 | 1983-08-22 | 集積回路装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP614077A Division JPS5390888A (en) | 1977-01-21 | 1977-01-21 | Integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5951563A JPS5951563A (ja) | 1984-03-26 |
| JPS639384B2 true JPS639384B2 (en]) | 1988-02-29 |
Family
ID=15549042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58152829A Granted JPS5951563A (ja) | 1983-08-22 | 1983-08-22 | 集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5951563A (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0629386B2 (ja) * | 1988-06-06 | 1994-04-20 | 本州製紙株式会社 | 高濃度澱粉接着剤 |
| JPH05267564A (ja) * | 1992-03-19 | 1993-10-15 | Fujitsu Ltd | 半導体記憶装置 |
-
1983
- 1983-08-22 JP JP58152829A patent/JPS5951563A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5951563A (ja) | 1984-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI677076B (zh) | 靜態隨機存取記憶體裝置 | |
| US4994893A (en) | Field effect transistor substantially coplanar surface structure | |
| EP0456059B1 (en) | Thin-film-transistor having Schottky barrier | |
| US4814841A (en) | Semiconductor device | |
| JPH0799255A (ja) | 半導体集積回路装置 | |
| JP3428240B2 (ja) | 半導体記憶装置 | |
| KR910010741A (ko) | 반도체 집적 회로 장치 | |
| US4780751A (en) | Semiconductor integrated circuit device | |
| JPS61220371A (ja) | 絶縁基板上ｍｏｓ形集積回路装置 | |
| JP2690242B2 (ja) | 半導体固定記憶装置 | |
| JPS62276868A (ja) | 半導体集積回路装置 | |
| JPS639384B2 (en]) | ||
| US5506802A (en) | Static random access memory device having high soft error immunity | |
| US5359562A (en) | Semiconductor memory having polycrystalline silicon load resistors and CMOS peripheral circuitry | |
| JP2663953B2 (ja) | 半導体装置 | |
| US6429469B1 (en) | Optical Proximity Correction Structures Having Decoupling Capacitors | |
| JPS6041464B2 (ja) | メモリセル | |
| JPH04250663A (ja) | 半導体メモリ装置 | |
| JPS5834949B2 (ja) | 半導体メモリ装置 | |
| JP3070060B2 (ja) | 半導体メモリ | |
| JPH06350053A (ja) | スタティックｒａｍのメモリセル | |
| JP3063179B2 (ja) | 半導体メモリ装置 | |
| KR20230094835A (ko) | 집적 회로 및 SRAM(Static Random Access Memory)( | |
| JPS60167375A (ja) | 半導体装置 | |
| JPH05283651A (ja) | 半導体装置 |